Infineon Technologies IRFH8311TRPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRFH8311TRPBF
- Infineon Technologies
- MOSFET N CH 30V 32A PQFN5X6
- Transistors - FETs, MOSFETs - Single
- IRFH8311TRPBF Лист данных
- 8-TQFN Exposed Pad
- Bulk
-
Lead free / RoHS Compliant - 2298
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRFH8311TRPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N CH 30V 32A PQFN5X6 |
| Package Bulk |
| Series HEXFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-TQFN Exposed Pad |
| Supplier Device Package PQFN (5x6) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.6W (Ta), 96W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 32A (Ta), 169A (Tc) |
| Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 2.35V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-TQFN Exposed Pad |
IRFH8311TRPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFH8311TRPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRFH8311TRPBF сопутствующие товары
Комментарии
Infineon Technologies
IRF7809AVTRPBF
MOSFET N-CH 30V 13.3A 8SO
BSZ0902NSI
MOSFET N-CH 30V 13.3A 8SO
BSC0902NS
MOSFET N-CH 30V 13.3A 8SO
IPD70R600P7SAUMA1
MOSFET N-CH 30V 13.3A 8SO
IRLR2905TRLPBF
MOSFET N-CH 30V 13.3A 8SO
BSZ068N06NSATMA1
MOSFET N-CH 30V 13.3A 8SO
IPD60R950C6ATMA1
MOSFET N-CH 30V 13.3A 8SO
IPD35N10S3L26ATMA1
MOSFET N-CH 30V 13.3A 8SO
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
