Infineon Technologies IPD50N03S4L06ATMA1
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- IPD50N03S4L06ATMA1
- Infineon Technologies
- MOSFET N-CH 30V 50A TO252-31
- Transistors - FETs, MOSFETs - Single
- IPD50N03S4L06ATMA1 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Bulk
-
Lead free / RoHS Compliant - 21605
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPD50N03S4L06ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 30V 50A TO252-31 |
| Package Bulk |
| Series Automotive, AEC-Q101, OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package PG-TO252-3-11 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 56W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
| Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 2.2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2330 pF @ 25 V |
| Vgs (Max) ±16V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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