Infineon Technologies IPB60R099C6
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- IPB60R099C6
- Infineon Technologies
- MOSFET N-CH 600V 37.9A TO263
- Transistors - FETs, MOSFETs - Single
- IPB60R099C6 Лист данных
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
Lead free / RoHS Compliant - 4904
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPB60R099C6 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 600V 37.9A TO263 |
| Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Series CoolMOS? |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package PG-TO263-2 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 278W (Tc) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 600V |
| Current - Continuous Drain (Id) @ 25°C 37.9A (Tc) |
| Rds On (Max) @ Id, Vgs 99 mOhm @ 18.1A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 1.21mA |
| Gate Charge (Qg) (Max) @ Vgs 119nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 100V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Vgs (Max) 20V |
| Package_case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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