Infineon Technologies AUIRF1404ZSTRL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- AUIRF1404ZSTRL
- Infineon Technologies
- MOSFET N-CH 40V 160A D2PAK
- Transistors - FETs, MOSFETs - Single
- AUIRF1404ZSTRL Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 1748
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number AUIRF1404ZSTRL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 40V 160A D2PAK |
| Package Tape & Reel (TR) |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D²PAK (TO-263AB) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 200W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 160A (Tc) |
| Rds On (Max) @ Id, Vgs 3.7mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4340 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
AUIRF1404ZSTRL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о AUIRF1404ZSTRL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
AUIRF1404ZSTRL сопутствующие товары
Комментарии
Infineon Technologies
IRFS7534TRLPBF
MOSFET N CH 60V 195A D2PAK
IPW60R230P6FKSA1
MOSFET N CH 60V 195A D2PAK
IRF3717
MOSFET N CH 60V 195A D2PAK
IPB65R225C7ATMA1
MOSFET N CH 60V 195A D2PAK
IPB180N04S4H0ATMA1
MOSFET N CH 60V 195A D2PAK
IPB011N04NGATMA1
MOSFET N CH 60V 195A D2PAK
IPB03N03LB G
MOSFET N CH 60V 195A D2PAK
IRF2907ZSPBF
MOSFET N CH 60V 195A D2PAK
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
