Infineon Technologies IMZA65R083M1HXKSA1
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- IMZA65R083M1HXKSA1
- Infineon Technologies
- SILICON CARBIDE MOSFET, PG-TO247
- Transistors - FETs, MOSFETs - Single
- IMZA65R083M1HXKSA1 Лист данных
- TO-247-4
- Tube
-
Lead free / RoHS Compliant - 737
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IMZA65R083M1HXKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description SILICON CARBIDE MOSFET, PG-TO247 |
| Package Tube |
| Series CoolSiC™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-4 |
| Supplier Device Package PG-TO247-4-3 |
| Technology SiC (Silicon Carbide Junction Transistor) |
| Power Dissipation (Max) 104W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 26A (Tc) |
| Rds On (Max) @ Id, Vgs 111mOhm @ 11.2A, 18V |
| Vgs(th) (Max) @ Id 5.7V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs 19 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds 624 pF @ 400 V |
| Vgs (Max) +20V, -2V |
| Drive Voltage (Max Rds On, Min Rds On) 18V |
| Package_case TO-247-4 |
IMZA65R083M1HXKSA1 Гарантии
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