IMZA65R057M1HXKSA1

Infineon Technologies IMZA65R057M1HXKSA1

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  • IMZA65R057M1HXKSA1
  • Infineon Technologies
  • SILICON CARBIDE MOSFET, PG-TO247
  • Transistors - FETs, MOSFETs - Single
  • IMZA65R057M1HXKSA1 Лист данных
  • TO-247-4
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IMZA65R057M1HXKSA1Lead free / RoHS Compliant
  • 4221
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IMZA65R057M1HXKSA1
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
SILICON CARBIDE MOSFET, PG-TO247
Package
Tube
Series
CoolSiC™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
PG-TO247-4-3
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
133W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V
Vgs(th) (Max) @ Id
5.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V
Vgs (Max)
+20V, -2V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
TO-247-4

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