Infineon Technologies IMZ120R090M1HXKSA1
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- IMZ120R090M1HXKSA1
- Infineon Technologies
- SICFET N-CH 1.2KV 26A TO247-4
- Transistors - FETs, MOSFETs - Single
- IMZ120R090M1HXKSA1 Лист данных
- TO-247-4
- Tube
-
Lead free / RoHS Compliant - 4969
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IMZ120R090M1HXKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description SICFET N-CH 1.2KV 26A TO247-4 |
| Package Tube |
| Series CoolSiC™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-4 |
| Supplier Device Package PG-TO247-4-1 |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 115W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1200 V |
| Current - Continuous Drain (Id) @ 25°C 26A (Tc) |
| Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V |
| Vgs(th) (Max) @ Id 5.7V @ 3.7mA |
| Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V |
| Vgs (Max) +23V, -7V |
| Drive Voltage (Max Rds On, Min Rds On) 15V, 18V |
| Package_case TO-247-4 |
IMZ120R090M1HXKSA1 Гарантии
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