Infineon Technologies IPP50R380CEXKSA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IPP50R380CEXKSA1
- Infineon Technologies
- MOSFET N-CH 500V 9.9A TO220-3
- Transistors - FETs, MOSFETs - Single
- IPP50R380CEXKSA1 Лист данных
- TO-220-3
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3922
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IPP50R380CEXKSA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 500V 9.9A TO220-3 |
| Package Tape & Reel (TR) |
| Series CoolMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package PG-TO220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 73W (Tc) |
| FET Type N-Channel |
| FET Feature Super Junction |
| Drain to Source Voltage (Vdss) 500 V |
| Current - Continuous Drain (Id) @ 25°C 9.9A (Tc) |
| Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 13V |
| Vgs(th) (Max) @ Id 3.5V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 584 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 13V |
| Package_case TO-220-3 |
IPP50R380CEXKSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IPP50R380CEXKSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IPP50R380CEXKSA1 сопутствующие товары
Комментарии
Infineon Technologies
IPD60R280CFD7ATMA1
MOSFET N-CH 650V 9A TO252-3
IPL60R285P7AUMA1
MOSFET N-CH 650V 9A TO252-3
IPB015N04NGATMA1
MOSFET N-CH 650V 9A TO252-3
IPP60R170CFD7XKSA1
MOSFET N-CH 650V 9A TO252-3
IPW60R190E6FKSA1
MOSFET N-CH 650V 9A TO252-3
IPP048N12N3GXKSA1
MOSFET N-CH 650V 9A TO252-3
IPP60R125C6XKSA1
MOSFET N-CH 650V 9A TO252-3
IPW60R165CPFKSA1
MOSFET N-CH 650V 9A TO252-3
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
Infineon Technologies-Gate driver reinforced isolation
HV driver with 6kV isolation in a SO-8W package
Flip chip package increases power density
200V half-bridge driver in SOIC-8 package
Fluence and Northvolt to co-develop battery technology for
Grid-scale energy storage
Global consortium for power system operators and research institutes
Addionics, Saint-Gobain Ceramics team on solid state battery tech
Lead perovskite boosts solar cell efficiency over 25 percent
200kW SiC inverter hits 99 percent efficiency
