Infineon Technologies IAUC100N10S5L040ATMA1
- IAUC100N10S5L040ATMA1
- Infineon Technologies
- MOSFET N-CH 100V 100A 8TDSON-34
- Transistors - FETs, MOSFETs - Single
- IAUC100N10S5L040ATMA1 Лист данных
- 8-PowerTDFN
- Tube
- Lead free / RoHS Compliant
- 13488
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IAUC100N10S5L040ATMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 100V 100A 8TDSON-34 |
Package Tube |
Series OptiMOS™-5 |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerTDFN |
Supplier Device Package PG-TDSON-8-34 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 167W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 100A (Tc) |
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 2V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerTDFN |
IAUC100N10S5L040ATMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IAUC100N10S5L040ATMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
IPB65R225C7ATMA2
MOSFET N-CH 650V 11A TO263-3
IRF2804LPBF
MOSFET N-CH 650V 11A TO263-3
AUIRF1010ZSTRL
MOSFET N-CH 650V 11A TO263-3
IPA60R210CFD7XKSA1
MOSFET N-CH 650V 11A TO263-3
IPB60R210CFD7ATMA1
MOSFET N-CH 650V 11A TO263-3
AUIRL3705ZSTRL
MOSFET N-CH 650V 11A TO263-3
IPL60R299CPAUMA1
MOSFET N-CH 650V 11A TO263-3
IPL60R225CFD7AUMA1
MOSFET N-CH 650V 11A TO263-3
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
Infineon High Power Density SiC MOSFET
Infineon High Power Density SiC MOSFETs
New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1.
Next, we will introduce another device from Infi