Infineon Technologies IPL60R299CPAUMA1
- IPL60R299CPAUMA1
- Infineon Technologies
- MOSFET N-CH 650V 11.1A 4VSON
- Transistors - FETs, MOSFETs - Single
- IPL60R299CPAUMA1 Лист данных
- 4-PowerTSFN
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 22771
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPL60R299CPAUMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 650V 11.1A 4VSON |
Package Tape & Reel (TR) |
Series CoolMOS™ |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 4-PowerTSFN |
Supplier Device Package PG-VSON-4 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 96W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 11.1A (Tc) |
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 4-PowerTSFN |
IPL60R299CPAUMA1 Гарантии
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