GBU1507

Taiwan Semiconductor Corporation GBU1507

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GBU1507
  • Taiwan Semiconductor Corporation
  • 15A, 1000V, STANDARD BRIDGE RECT
  • Diodes - Bridge Rectifiers
  • GBU1507 Лист данных
  • 4-SIP, GBU
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GBU1507Lead free / RoHS Compliant
  • 2775
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GBU1507
Category
Diodes - Bridge Rectifiers
Manufacturer
Taiwan Semiconductor Corporation
Description
15A, 1000V, STANDARD BRIDGE RECT
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
4-SIP, GBU
Supplier Device Package
GBU
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1 kV
Current - Average Rectified (Io)
15 A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 15 A
Current - Reverse Leakage @ Vr
5 µA @ 1000 V
Package_case
4-SIP, GBU

GBU1507 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GBU1507

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GBU1507

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GBU1507

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GBU1507 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Taiwan Semiconductor Corporation

KBU1005G T0,https://www.jinftry.ru/product_detail/GBU1507
KBU1005G T0

BRIDGE RECT 1PHASE 600V 10A KBU

KBU607G T0,https://www.jinftry.ru/product_detail/GBU1507
KBU607G T0

BRIDGE RECT 1PHASE 600V 10A KBU

TBS410 M1G,https://www.jinftry.ru/product_detail/GBU1507
TBS410 M1G

BRIDGE RECT 1PHASE 600V 10A KBU

TBS606 M1G,https://www.jinftry.ru/product_detail/GBU1507
TBS606 M1G

BRIDGE RECT 1PHASE 600V 10A KBU

GBU2505 D2,https://www.jinftry.ru/product_detail/GBU1507
GBU2505 D2

BRIDGE RECT 1PHASE 600V 10A KBU

RABS20M M3G,https://www.jinftry.ru/product_detail/GBU1507
RABS20M M3G

BRIDGE RECT 1PHASE 600V 10A KBU

GBU1506,https://www.jinftry.ru/product_detail/GBU1507
GBU1506

BRIDGE RECT 1PHASE 600V 10A KBU

KBU807G T0,https://www.jinftry.ru/product_detail/GBU1507
KBU807G T0

BRIDGE RECT 1PHASE 600V 10A KBU

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP