CBR1-D060S

Central Semiconductor Corp CBR1-D060S

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • CBR1-D060S
  • Central Semiconductor Corp
  • BRIDGE RECT 1P 600V 1A 4SMDIP
  • Diodes - Bridge Rectifiers
  • CBR1-D060S Лист данных
  • 4-SMD, Gull Wing
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/CBR1-D060SLead free / RoHS Compliant
  • 3365
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
CBR1-D060S
Category
Diodes - Bridge Rectifiers
Manufacturer
Central Semiconductor Corp
Description
BRIDGE RECT 1P 600V 1A 4SMDIP
Package
Tube
Series
CBR1
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-SMDIP
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
600 V
Current - Average Rectified (Io)
1 A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 1 A
Current - Reverse Leakage @ Vr
10 µA @ 600 V
Package_case
4-SMD, Gull Wing

CBR1-D060S Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/CBR1-D060S

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/CBR1-D060S

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/CBR1-D060S

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о CBR1-D060S ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Central Semiconductor Corp

CBR1-D100S TR13 PBFREE,https://www.jinftry.ru/product_detail/CBR1-D060S
CBR1-D100S TR13 PBFREE

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBR1-D040S TR13 PBFREE,https://www.jinftry.ru/product_detail/CBR1-D060S
CBR1-D040S TR13 PBFREE

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBR6M-L080M TIN/LEAD,https://www.jinftry.ru/product_detail/CBR1-D060S
CBR6M-L080M TIN/LEAD

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBR1-100 TIN/LEAD,https://www.jinftry.ru/product_detail/CBR1-D060S
CBR1-100 TIN/LEAD

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBR1A-080 TIN/LEAD,https://www.jinftry.ru/product_detail/CBR1-D060S
CBR1A-080 TIN/LEAD

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBR1U-D020S TIN/LEAD,https://www.jinftry.ru/product_detail/CBR1-D060S
CBR1U-D020S TIN/LEAD

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBRHDSH2-100 TR13 PBFREE,https://www.jinftry.ru/product_detail/CBR1-D060S
CBRHDSH2-100 TR13 PBFREE

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

CBRDFSH2-60 TR13,https://www.jinftry.ru/product_detail/CBR1-D060S
CBRDFSH2-60 TR13

BRIDGE RECT 1PHASE 1KV 1A 4SMDIP

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP