GAP3SLT33-214

GeneSiC Semiconductor GAP3SLT33-214

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • GAP3SLT33-214
  • GeneSiC Semiconductor
  • DIODE SCHOTTKY 3.3KV 300MA DO214
  • Diodes - Rectifiers - Single
  • GAP3SLT33-214 Лист данных
  • DO-214AA, SMB
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/GAP3SLT33-214Lead free / RoHS Compliant
  • 13184
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
GAP3SLT33-214
Category
Diodes - Rectifiers - Single
Manufacturer
GeneSiC Semiconductor
Description
DIODE SCHOTTKY 3.3KV 300MA DO214
Package
Tape & Reel (TR)
Series
SiC Schottky MPS™
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Supplier Device Package
DO-214AA
Diode Type
Silicon Carbide Schottky
Current - Average Rectified (Io)
300mA (DC)
Voltage - Forward (Vf) (Max) @ If
2.2 V @ 300 mA
Current - Reverse Leakage @ Vr
10 µA @ 3300 V
Capacitance @ Vr, F
42pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max)
3300 V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Operating Temperature - Junction
-55°C ~ 175°C
Package_case
DO-214AA, SMB

GAP3SLT33-214 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/GAP3SLT33-214

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/GAP3SLT33-214

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/GAP3SLT33-214

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о GAP3SLT33-214 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

GeneSiC Semiconductor

MBR3545,https://www.jinftry.ru/product_detail/GAP3SLT33-214
MBR3545

DIODE SCHOTTKY 45V 35A DO4

FR30J02,https://www.jinftry.ru/product_detail/GAP3SLT33-214
FR30J02

DIODE SCHOTTKY 45V 35A DO4

GB05SLT12-220,https://www.jinftry.ru/product_detail/GAP3SLT33-214
GB05SLT12-220

DIODE SCHOTTKY 45V 35A DO4

GB01SLT12-214,https://www.jinftry.ru/product_detail/GAP3SLT33-214
GB01SLT12-214

DIODE SCHOTTKY 45V 35A DO4

GB01SLT06-214,https://www.jinftry.ru/product_detail/GAP3SLT33-214
GB01SLT06-214

DIODE SCHOTTKY 45V 35A DO4

GB02SLT12-214,https://www.jinftry.ru/product_detail/GAP3SLT33-214
GB02SLT12-214

DIODE SCHOTTKY 45V 35A DO4

S380Y,https://www.jinftry.ru/product_detail/GAP3SLT33-214
S380Y

DIODE SCHOTTKY 45V 35A DO4

GB01SLT12-252,https://www.jinftry.ru/product_detail/GAP3SLT33-214
GB01SLT12-252

DIODE SCHOTTKY 45V 35A DO4

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP