FZ3600R17HP4B2BOSA2

Infineon Technologies FZ3600R17HP4B2BOSA2

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FZ3600R17HP4B2BOSA2
  • Infineon Technologies
  • IGBT MODULE 1700V 3600A
  • Transistors - IGBTs - Modules
  • FZ3600R17HP4B2BOSA2 Лист данных
  • -
  • Tray
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2Lead free / RoHS Compliant
  • 821
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FZ3600R17HP4B2BOSA2
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
IGBT MODULE 1700V 3600A
Package
Tray
Series
-
Operating Temperature
-
Mounting Type
-
Package / Case
-
Supplier Device Package
-
Power - Max
-
Configuration
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
-
Current - Collector Cutoff (Max)
-
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Package_case
-

FZ3600R17HP4B2BOSA2 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FZ3600R17HP4B2BOSA2 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FF600R12IS4FBOSA1,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FF600R12IS4FBOSA1

IGBT MOD 1200V 600A 3700W

FZ1800R17HP4B29BOSA2,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FZ1800R17HP4B29BOSA2

IGBT MOD 1200V 600A 3700W

FD800R17HP4-K_B2,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FD800R17HP4-K_B2

IGBT MOD 1200V 600A 3700W

FF800R12KF4,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FF800R12KF4

IGBT MOD 1200V 600A 3700W

FF1200R17KP4B2NOSA2,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FF1200R17KP4B2NOSA2

IGBT MOD 1200V 600A 3700W

FF401R17KF6C_B2,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FF401R17KF6C_B2

IGBT MOD 1200V 600A 3700W

FS820R08A6P2LMBPSA1,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FS820R08A6P2LMBPSA1

IGBT MOD 1200V 600A 3700W

FS820R08A6P2LBBPSA1,https://www.jinftry.ru/product_detail/FZ3600R17HP4B2BOSA2
FS820R08A6P2LBBPSA1

IGBT MOD 1200V 600A 3700W

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP