FF800R17KF6C_B2

Infineon Technologies Industrial Power and Controls Americas FF800R17KF6C_B2

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • FF800R17KF6C_B2
  • Infineon Technologies Industrial Power and Controls Americas
  • IGBT MODULE VCES 1200V 800A
  • Transistors - IGBTs - Modules
  • FF800R17KF6C_B2 Лист данных
  • -
  • -
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2Lead free / RoHS Compliant
  • 4192
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
FF800R17KF6C_B2
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies Industrial Power and Controls Americas
Description
IGBT MODULE VCES 1200V 800A
Package
-
Series
*
Package_case
-

FF800R17KF6C_B2 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о FF800R17KF6C_B2 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies Industrial Power and Controls Americas

FF400R33KF2C,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FF400R33KF2C

IGBT MODULE VCES 650V 400A

FD600R17KE3-K_B5,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FD600R17KE3-K_B5

IGBT MODULE VCES 650V 400A

FF1200R17KE3,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FF1200R17KE3

IGBT MODULE VCES 650V 400A

FD400R33KF2C-K,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FD400R33KF2C-K

IGBT MODULE VCES 650V 400A

FD400R33KF2C,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FD400R33KF2C

IGBT MODULE VCES 650V 400A

FF600R17KE3_B2,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FF600R17KE3_B2

IGBT MODULE VCES 650V 400A

FD600R17KE3_B2,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FD600R17KE3_B2

IGBT MODULE VCES 650V 400A

FF1200R12KE3,https://www.jinftry.ru/product_detail/FF800R17KF6C-B2
FF1200R12KE3

IGBT MODULE VCES 650V 400A

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The latest 2N3055 transistor datasheet, application, and price analysis in 2023

2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP