Infineon Technologies FZ1200R33KF2CNOSA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- FZ1200R33KF2CNOSA1
- Infineon Technologies
- IGBT MODULE 3300V 2000A
- Transistors - IGBTs - Modules
- FZ1200R33KF2CNOSA1 Лист данных
- Module
- Bulk
-
Lead free / RoHS Compliant - 2271
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number FZ1200R33KF2CNOSA1 |
| Category Transistors - IGBTs - Modules |
| Manufacturer Infineon Technologies |
| Description IGBT MODULE 3300V 2000A |
| Package Bulk |
| Series - |
| Operating Temperature -40°C ~ 125°C |
| Mounting Type Chassis Mount |
| Package / Case Module |
| Supplier Device Package Module |
| Power - Max 14500 W |
| Configuration Full Bridge |
| Current - Collector (Ic) (Max) 2000 A |
| Voltage - Collector Emitter Breakdown (Max) 3300 V |
| Current - Collector Cutoff (Max) 12 mA |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic 4.25V @ 15V, 1200A |
| Input Capacitance (Cies) @ Vce 150 nF @ 25 V |
| Input Standard |
| NTC Thermistor No |
| Package_case Module |
FZ1200R33KF2CNOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FZ1200R33KF2CNOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
FZ1200R33KF2CNOSA1 сопутствующие товары
Комментарии
Infineon Technologies
2PS12017E34W32132NOSA1
MODULE IGBT STACK A-PS4-1
2PS13512E43W39689NOSA1
MODULE IGBT STACK A-PS4-1
2PS18012E44G38553NOSA1
MODULE IGBT STACK A-PS4-1
2PS18012E44G40113NOSA1
MODULE IGBT STACK A-PS4-1
6PS18012E4FG38393NWSA1
MODULE IGBT STACK A-PS4-1
6PS18012E4FG42192NWSA1
MODULE IGBT STACK A-PS4-1
6PS18012E4FG35689NWSA1
MODULE IGBT STACK A-PS4-1
6MS24017P43W41646NOSA1
MODULE IGBT STACK A-PS4-1
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
