Infineon Technologies 2PS12017E34W32132NOSA1
- 2PS12017E34W32132NOSA1
- Infineon Technologies
- MODULE IGBT STACK A-PS4-1
- Transistors - IGBTs - Modules
- 2PS12017E34W32132NOSA1 Лист данных
- Module
- Bulk
-
Lead free / RoHS Compliant
- 1566
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 2PS12017E34W32132NOSA1 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description MODULE IGBT STACK A-PS4-1 |
Package Bulk |
Series - |
Operating Temperature -25°C ~ 55°C |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package Module |
Power - Max - |
Configuration Three Phase Inverter |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Current - Collector Cutoff (Max) - |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic - |
Input Capacitance (Cies) @ Vce - |
Input Standard |
NTC Thermistor No |
Package_case Module |
2PS12017E34W32132NOSA1 Гарантии
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
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