Infineon Technologies FF800R17KP4B2NOSA2
- FF800R17KP4B2NOSA2
- Infineon Technologies
- IGBT MODULE 1700V 800A
- Transistors - IGBTs - Modules
- FF800R17KP4B2NOSA2 Лист данных
- -
- Tray
- Lead free / RoHS Compliant
- 12847
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FF800R17KP4B2NOSA2 |
Category Transistors - IGBTs - Modules |
Manufacturer Infineon Technologies |
Description IGBT MODULE 1700V 800A |
Package Tray |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Power - Max - |
Configuration - |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) - |
Current - Collector Cutoff (Max) - |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic - |
Input Capacitance (Cies) @ Vce - |
Input - |
NTC Thermistor - |
Package_case - |
FF800R17KP4B2NOSA2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FF800R17KP4B2NOSA2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
FZ2400R17HP4HOSA2
IGBT MODULE 1700V 400A
DF1400R12IP4D
IGBT MODULE 1700V 400A
FD1600/1200R17KF6C_B2
IGBT MODULE 1700V 400A
FS100R17KS4F
IGBT MODULE 1700V 400A
FZ3600R17HP4B2BOSA2
IGBT MODULE 1700V 400A
FF600R12IS4FBOSA1
IGBT MODULE 1700V 400A
FZ1800R17HP4B29BOSA2
IGBT MODULE 1700V 400A
FD800R17HP4-K_B2
IGBT MODULE 1700V 400A
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Infineon TRENCHSTOP IGBT7 S7
Infineon TRENCHSTOP IGBT7 S7
Infineon Technologies TRENCHSTOP IGBT7 S7 offers a broad 1200V portfolio for all industrial applications requiring short circuit capability/robustness. IGBT7 S7 is a high efficiency short circuit robust discrete IGBT with at least 10% lower saturation voltage than other products.
Infineon IGBT7 S7 offers a very flexible fully rated EC7 diode which significantly reduces the IGBT saturation V CEsat. IGBT7 offers excellent controllability and short-circuit tolerance
Infineon's security chips are the first to receive CLS-Ready certification from the Singapore Cyber Security Agency
Infineon's security chips are the first to receive CLS-Ready certification from the Singapore Cyber Security Agency
Infineon Technologies AG's OPTIGA™ Trust M security chip has become the first security platform to be CLS-Ready certified by the Cyber Security Agency of Singapore (CSA). As the number of IoT devices increases, so does the number of cyber-attack incidents. But the security issues of Internet of Things (IoT) and Internet of Things (IoTT) devices are often overlooked, and pe