EPC EPC2033ENGRT
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- EPC2033ENGRT
- EPC
- TRANS GAN 150V 31A BUMPED DIE
- Transistors - FETs, MOSFETs - Single
- EPC2033ENGRT Лист данных
- Die
- Die
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Lead free / RoHS Compliant - 3160
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- Гарантия качества на 1 год 》
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| Part Number EPC2033ENGRT |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer EPC |
| Description TRANS GAN 150V 31A BUMPED DIE |
| Package Die |
| Series eGaN? |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Technology GaNFET (Gallium Nitride) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 150V |
| Current - Continuous Drain (Id) @ 25°C 31A (Ta) |
| Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id 2.5V @ 9mA |
| Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds 1140pF @ 75V |
| Drive Voltage (Max Rds On, Min Rds On) 5V |
| Vgs (Max) +6V, -4V |
| Package_case Die |
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