EPC EPC2020ENGR
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- EPC2020ENGR
- EPC
- TRANS GAN 60V 60A BUMPED DIE
- Transistors - FETs, MOSFETs - Single
- EPC2020ENGR Лист данных
- Die
- Die
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- Гарантия качества на 1 год 》
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| Part Number EPC2020ENGR |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer EPC |
| Description TRANS GAN 60V 60A BUMPED DIE |
| Package Die |
| Series eGaN? |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Technology GaNFET (Gallium Nitride) |
| FET Type N-Channel |
| Drain to Source Voltage (Vdss) 60V |
| Current - Continuous Drain (Id) @ 25°C 60A (Ta) |
| Rds On (Max) @ Id, Vgs 2.2 mOhm @ 31A, 5V |
| Vgs(th) (Max) @ Id 2.5V @ 16mA |
| Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 30V |
| Drive Voltage (Max Rds On, Min Rds On) 5V |
| Vgs (Max) +6V, -4V |
| Package_case Die |
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