EPC EPC2012C
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- EPC2012C
- EPC
- GANFET N-CH 200V 5A DIE OUTLINE
- Transistors - FETs, MOSFETs - Single
- EPC2012C Лист данных
- Die
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 19102
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- Гарантия качества на 1 год 》
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| Part Number EPC2012C |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer EPC |
| Description GANFET N-CH 200V 5A DIE OUTLINE |
| Package Tape & Reel (TR) |
| Series eGaN® |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die Outline (4-Solder Bar) |
| Technology GaNFET (Gallium Nitride) |
| Power Dissipation (Max) - |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 5A (Ta) |
| Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 5V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V |
| Vgs (Max) +6V, -4V |
| Drive Voltage (Max Rds On, Min Rds On) 5V |
| Package_case Die |
EPC2012C Гарантии
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