EPC EPC2001
- EPC2001
- EPC
- GANFET N-CH 100V 25A DIE OUTLINE
- Transistors - FETs, MOSFETs - Single
- EPC2001 Лист данных
- Die
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3017
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number EPC2001 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer EPC |
Description GANFET N-CH 100V 25A DIE OUTLINE |
Package Tape & Reel (TR) |
Series eGaN® |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die Outline (11-Solder Bar) |
Technology GaNFET (Gallium Nitride) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 25A (Ta) |
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 50 V |
Vgs (Max) +6V, -5V |
Drive Voltage (Max Rds On, Min Rds On) 5V |
Package_case Die |
EPC2001 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о EPC2001 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
EPC
EPC2034
GANFET N-CH 200V 48A DIE
EPC2033
GANFET N-CH 200V 48A DIE
EPC2022
GANFET N-CH 200V 48A DIE
EPC2021
GANFET N-CH 200V 48A DIE
EPC2032
GANFET N-CH 200V 48A DIE
EPC2029
GANFET N-CH 200V 48A DIE
EPC2031ENGRT
GANFET N-CH 200V 48A DIE
EPC2010C
GANFET N-CH 200V 48A DIE
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4