Diodes Incorporated DMN2005UFG-7
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- DMN2005UFG-7
- Diodes Incorporated
- MOSFET N-CH 20V 18.1A PWRDI3333
- Transistors - FETs, MOSFETs - Single
- DMN2005UFG-7 Лист данных
- 8-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 16361
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number DMN2005UFG-7 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET N-CH 20V 18.1A PWRDI3333 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package PowerDI3333-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.05W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 18.1A (Tc) |
| Rds On (Max) @ Id, Vgs 4.6mOhm @ 13.5A, 4.5V |
| Vgs(th) (Max) @ Id 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 6495 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case 8-PowerVDFN |
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