Diodes Incorporated DMG4N65CT
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- DMG4N65CT
- Diodes Incorporated
- MOSFET N CH 650V 4A TO220-3
- Transistors - FETs, MOSFETs - Single
- DMG4N65CT Лист данных
- TO-220-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 25708
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number DMG4N65CT |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET N CH 650V 4A TO220-3 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.19W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
| Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
DMG4N65CT Гарантии
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