Texas Instruments CSD13306WT
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- CSD13306WT
- Texas Instruments
- MOSFET N-CH 12V 3.5A 6DSBGA
- Transistors - FETs, MOSFETs - Single
- CSD13306WT Лист данных
- 6-UFBGA, DSBGA
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 16625
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number CSD13306WT |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Texas Instruments |
| Description MOSFET N-CH 12V 3.5A 6DSBGA |
| Package Cut Tape (CT) |
| Series NexFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-UFBGA, DSBGA |
| Supplier Device Package 6-DSBGA (1x1.5) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.9W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 12 V |
| Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs 10.2mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id 1.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 11.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 6 V |
| Vgs (Max) ±10V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case 6-UFBGA, DSBGA |
CSD13306WT Гарантии
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