Texas Instruments CSD19537Q3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- CSD19537Q3
- Texas Instruments
- MOSFET N-CH 100V 9.7A/50A 8VSON
- Transistors - FETs, MOSFETs - Single
- CSD19537Q3 Лист данных
- 8-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1896
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number CSD19537Q3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Texas Instruments |
| Description MOSFET N-CH 100V 9.7A/50A 8VSON |
| Package Cut Tape (CT) |
| Series NexFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package 8-VSON (3.3x3.3) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.8W (Ta), 83W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 50A (Ta) |
| Rds On (Max) @ Id, Vgs 14.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 3.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case 8-PowerVDFN |
CSD19537Q3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CSD19537Q3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
CSD19537Q3 сопутствующие товары
Комментарии
Texas Instruments
CSD16323Q3C
MOSFET N-CH 25V 21A/60A 8SON
CSD17506Q5A
MOSFET N-CH 25V 21A/60A 8SON
CSD16413Q5A
MOSFET N-CH 25V 21A/60A 8SON
CSD17573Q5B
MOSFET N-CH 25V 21A/60A 8SON
CSD16403Q5A
MOSFET N-CH 25V 21A/60A 8SON
CSD17301Q5A
MOSFET N-CH 25V 21A/60A 8SON
CSD19537Q3T
MOSFET N-CH 25V 21A/60A 8SON
CSD18509Q5B
MOSFET N-CH 25V 21A/60A 8SON
The important role of semiconductors in the energy transition
The important role of semiconductors in the energy transition
Semiconductors are revolutionizing the way we live, generate, store and consume energy.
The world is increasingly turning to renewable energy to reduce dependence on non-renewable fuels and combat climate change. Electrification is a key strategic direction in enabling this transformation, and semiconductors play a major role in revolutionizing the way we generate, store and consume energy.
Semiconductors, especially an
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
jinftry's detailed introduction to LM329BZ#TRPBF
Jinftry will introduce the specific models and application scenarios of LM329BZ #TRPBF in detail.
IC VREF SHUNT 6.9V TO92-3, including tape and reel (TR) alternative packaging, they are designed for use with TO-226-3, TO-92-3 (TO-226AA) package housings, and have an operating temperature range of 0°C ~ 70°C (TA), available with mounting type features such as through hole, output type designed for stationary operation, and TO-92 -3 Supplier Device Package, the device is also available as
