Central Semiconductor Corp CP681-MPSH81-CT20
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- CP681-MPSH81-CT20
- Central Semiconductor Corp
- RF TRANS PNP 20V 600MHZ DIE
- Transistors - Bipolar (BJT) - RF
- CP681-MPSH81-CT20 Лист данных
- Die
- Tray
-
Lead free / RoHS Compliant - 3698
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number CP681-MPSH81-CT20 |
| Category Transistors - Bipolar (BJT) - RF |
| Manufacturer Central Semiconductor Corp |
| Description RF TRANS PNP 20V 600MHZ DIE |
| Package Tray |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| Gain - |
| Power - Max - |
| Transistor Type PNP |
| Current - Collector (Ic) (Max) 50mA |
| Voltage - Collector Emitter Breakdown (Max) 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V |
| Frequency - Transition 600MHz |
| Noise Figure (dB Typ @ f) - |
| Package_case Die |
CP681-MPSH81-CT20 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CP681-MPSH81-CT20 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
CP681-MPSH81-CT20 сопутствующие товары
Комментарии
Central Semiconductor Corp
CEN1107 APM
TRANSISTOR NPN
CMPTH10 TR
TRANSISTOR NPN
CEN1107
TRANSISTOR NPN
CMPTH10 BK
TRANSISTOR NPN
CP302-MPSH10-WN
TRANSISTOR NPN
CP302-MPSH10-CT
TRANSISTOR NPN
CP302-MPSH10-CT20
TRANSISTOR NPN
CP618-2N5583-WN
TRANSISTOR NPN
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
