Central Semiconductor Corp CP681-MPSH81-CT
- CP681-MPSH81-CT
- Central Semiconductor Corp
- RF TRANS PNP 20V 600MHZ DIE
- Transistors - Bipolar (BJT) - RF
- CP681-MPSH81-CT Лист данных
- Die
- Tray
- Lead free / RoHS Compliant
- 8121
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number CP681-MPSH81-CT |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Central Semiconductor Corp |
Description RF TRANS PNP 20V 600MHZ DIE |
Package Tray |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Gain - |
Power - Max - |
Transistor Type PNP |
Current - Collector (Ic) (Max) 50mA |
Voltage - Collector Emitter Breakdown (Max) 20V |
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V |
Frequency - Transition 600MHz |
Noise Figure (dB Typ @ f) - |
Package_case Die |
CP681-MPSH81-CT Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CP681-MPSH81-CT ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Central Semiconductor Corp
MPSH81 TRE
RF TRANS PNP 20V 600MHZ SOT23
CEN1107 APM
RF TRANS PNP 20V 600MHZ SOT23
CMPTH10 TR
RF TRANS PNP 20V 600MHZ SOT23
CEN1107
RF TRANS PNP 20V 600MHZ SOT23
CMPTH10 BK
RF TRANS PNP 20V 600MHZ SOT23
CP302-MPSH10-WN
RF TRANS PNP 20V 600MHZ SOT23
CP302-MPSH10-CT
RF TRANS PNP 20V 600MHZ SOT23
CP302-MPSH10-CT20
RF TRANS PNP 20V 600MHZ SOT23
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.