Rohm Semiconductor CDZT2RA13B
- CDZT2RA13B
- Rohm Semiconductor
- DIODE ZENER 13V 100MW VMN2
- Diodes - Zener - Single
- CDZT2RA13B Лист данных
- SOD-923
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 6133
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number CDZT2RA13B |
Category Diodes - Zener - Single |
Manufacturer Rohm Semiconductor |
Description DIODE ZENER 13V 100MW VMN2 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case SOD-923 |
Supplier Device Package VMN2 |
Tolerance ±2% |
Power - Max 100 mW |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 100 nA @ 10 V |
Voltage - Zener (Nom) (Vz) 13 V |
Impedance (Max) (Zzt) 37 Ohms |
Package_case SOD-923 |
CDZT2RA13B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о CDZT2RA13B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rohm Semiconductor
TFZTR4.7B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR20B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR16B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR10B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR7.5B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR3.9B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR27B
DIODE ZENER 4.7V 500MW TUMD2
KDZTR24B
DIODE ZENER 4.7V 500MW TUMD2
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.