Rohm Semiconductor TFZTR4.7B
- TFZTR4.7B
- Rohm Semiconductor
- DIODE ZENER 4.7V 500MW TUMD2
- Diodes - Zener - Single
- TFZTR4.7B Лист данных
- -
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 21841
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TFZTR4.7B |
Category Diodes - Zener - Single |
Manufacturer Rohm Semiconductor |
Description DIODE ZENER 4.7V 500MW TUMD2 |
Package Cut Tape (CT) |
Series - |
Operating Temperature - |
Mounting Type - |
Package / Case - |
Supplier Device Package - |
Tolerance - |
Power - Max - |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr - |
Voltage - Zener (Nom) (Vz) - |
Impedance (Max) (Zzt) - |
Package_case - |
TFZTR4.7B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TFZTR4.7B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rohm Semiconductor
KDZTR20B
DIODE ZENER 20.8V 1W PMDU
KDZTR16B
DIODE ZENER 20.8V 1W PMDU
KDZTR10B
DIODE ZENER 20.8V 1W PMDU
KDZTR7.5B
DIODE ZENER 20.8V 1W PMDU
KDZTR3.9B
DIODE ZENER 20.8V 1W PMDU
KDZTR27B
DIODE ZENER 20.8V 1W PMDU
KDZTR24B
DIODE ZENER 20.8V 1W PMDU
CDZVT2R2.2B
DIODE ZENER 20.8V 1W PMDU
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: