Infineon Technologies BSZ0910NDXTMA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BSZ0910NDXTMA1
- Infineon Technologies
- DIFFERENTIATED MOSFETS
- Transistors - FETs, MOSFETs - Arrays
- BSZ0910NDXTMA1 Лист данных
- 8-PowerVDFN
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 6216
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BSZ0910NDXTMA1 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Infineon Technologies |
| Description DIFFERENTIATED MOSFETS |
| Package Jinftry-Reel® |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package PG-WISON-8 |
| Power - Max 1.9W (Ta), 31W (Tc) |
| FET Type 2 N-Channel (Dual) |
| FET Feature Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) 30V |
| Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs 9.5mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds 800pF @ 15V |
| Package_case 8-PowerVDFN |
BSZ0910NDXTMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BSZ0910NDXTMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BSZ0910NDXTMA1 сопутствующие товары
Комментарии
Infineon Technologies
IAUC60N04S6N031HATMA1
IAUC60N04S6N031HATMA1
BSC076N04NDATMA1
IAUC60N04S6N031HATMA1
FF2MR12KM1HOSA1
IAUC60N04S6N031HATMA1
FF3MR12KM1HOSA1
IAUC60N04S6N031HATMA1
SP000629364
IAUC60N04S6N031HATMA1
SPP15P10PH
IAUC60N04S6N031HATMA1
IPA60R600E6
IAUC60N04S6N031HATMA1
IPP60R380E6
IAUC60N04S6N031HATMA1
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
