Infineon Technologies FF3MR12KM1HOSA1
- FF3MR12KM1HOSA1
- Infineon Technologies
- MEDIUM POWER 62MM
- Transistors - FETs, MOSFETs - Arrays
- FF3MR12KM1HOSA1 Лист данных
- Module
- Tray
- Lead free / RoHS Compliant
- 8953
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number FF3MR12KM1HOSA1 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Infineon Technologies |
Description MEDIUM POWER 62MM |
Package Tray |
Series CoolSiC™ |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case Module |
Supplier Device Package AG-62MM |
Power - Max - |
FET Type 2 N-Channel (Half Bridge) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C 375A (Tc) |
Rds On (Max) @ Id, Vgs 2.83mOhm @ 375A, 15V |
Vgs(th) (Max) @ Id 5.15V @ 168mA |
Gate Charge (Qg) (Max) @ Vgs 1000nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds 29800pF @ 25V |
Package_case Module |
FF3MR12KM1HOSA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о FF3MR12KM1HOSA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
SP000629364
IPP60R950C6 - 600V N-CHANNEL
SPP15P10PH
IPP60R950C6 - 600V N-CHANNEL
IPA60R600E6
IPP60R950C6 - 600V N-CHANNEL
IPP60R380E6
IPP60R950C6 - 600V N-CHANNEL
IPA50R350CP
IPP60R950C6 - 600V N-CHANNEL
SP001017058
IPP60R950C6 - 600V N-CHANNEL
DF11MR12W1M1PB11BPSA1
IPP60R950C6 - 600V N-CHANNEL
F415MR12W2M1B76BOMA1
IPP60R950C6 - 600V N-CHANNEL
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.