Microsemi Corporation APTM100VDA35T3G
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- APTM100VDA35T3G
- Microsemi Corporation
- MOSFET 2N-CH 1000V 22A SP3
- Transistors - FETs, MOSFETs - Arrays
- APTM100VDA35T3G Лист данных
- SP3
- Bulk
-
Lead free / RoHS Compliant - 1393
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number APTM100VDA35T3G |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Microsemi Corporation |
| Description MOSFET 2N-CH 1000V 22A SP3 |
| Package Bulk |
| Series POWER MOS 7® |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SP3 |
| Supplier Device Package SP3 |
| Power - Max 390W |
| FET Type 2 N-Channel (Dual) |
| FET Feature Standard |
| Drain to Source Voltage (Vdss) 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C 22A |
| Rds On (Max) @ Id, Vgs 420mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V |
| Package_case SP3 |
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