Microsemi Corporation APTC90DDA12T1G
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- APTC90DDA12T1G
- Microsemi Corporation
- MOSFET 2N-CH 900V 30A SP1
- Transistors - FETs, MOSFETs - Arrays
- APTC90DDA12T1G Лист данных
- SP1
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2079
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number APTC90DDA12T1G |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Microsemi Corporation |
| Description MOSFET 2N-CH 900V 30A SP1 |
| Package Cut Tape (CT) |
| Series CoolMOS™ |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SP1 |
| Supplier Device Package SP1 |
| Power - Max 250W |
| FET Type 2 N Channel (Dual Buck Chopper) |
| FET Feature Super Junction |
| Drain to Source Voltage (Vdss) 900V |
| Current - Continuous Drain (Id) @ 25°C 30A |
| Rds On (Max) @ Id, Vgs 120mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id 3.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V |
| Package_case SP1 |
APTC90DDA12T1G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о APTC90DDA12T1G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
APTC90DDA12T1G сопутствующие товары
Комментарии
Microsemi Corporation
VRF2933FL
MOSFET RF N-CH 170V 30MHZ T2
ARF448BG
MOSFET RF N-CH 170V 30MHZ T2
ARF448AG
MOSFET RF N-CH 170V 30MHZ T2
ARF447G
MOSFET RF N-CH 170V 30MHZ T2
ARF446G
MOSFET RF N-CH 170V 30MHZ T2
2735GN-35M
MOSFET RF N-CH 170V 30MHZ T2
VRF3933MP
MOSFET RF N-CH 170V 30MHZ T2
2731GN-110M
MOSFET RF N-CH 170V 30MHZ T2
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
