Microsemi Corporation APT1002RBNG
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- APT1002RBNG
- Microsemi Corporation
- MOSFET N-CH 1000V 8A TO247AD
- Transistors - FETs, MOSFETs - Single
- APT1002RBNG Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 21352
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number APT1002RBNG |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Microsemi Corporation |
| Description MOSFET N-CH 1000V 8A TO247AD |
| Package Tube |
| Series POWER MOS IV® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247AD |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 240W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1000 V |
| Current - Continuous Drain (Id) @ 25°C 8A (Tc) |
| Rds On (Max) @ Id, Vgs 1.6Ohm @ 4A, 10V |
| Vgs(th) (Max) @ Id 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
APT1002RBNG Гарантии
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