Microsemi Corporation 3EZ5.6DE3/TR12
- 3EZ5.6DE3/TR12
- Microsemi Corporation
- DIODE ZENER 5.6V 3W DO204AL
- Diodes - Zener - Single
- 3EZ5.6DE3/TR12 Лист данных
- DO-204AL, DO-41, Axial
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1760
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 3EZ5.6DE3/TR12 |
Category Diodes - Zener - Single |
Manufacturer Microsemi Corporation |
Description DIODE ZENER 5.6V 3W DO204AL |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -65°C ~ 150°C |
Mounting Type Through Hole |
Package / Case DO-204AL, DO-41, Axial |
Supplier Device Package DO-204AL (DO-41) |
Tolerance ±20% |
Power - Max 3 W |
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 200 mA |
Current - Reverse Leakage @ Vr 5 µA @ 2 V |
Voltage - Zener (Nom) (Vz) 5.6 V |
Impedance (Max) (Zzt) 2.5 Ohms |
Package_case DO-204AL, DO-41, Axial |
3EZ5.6DE3/TR12 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 3EZ5.6DE3/TR12 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Microsemi Corporation
3EZ5.1DE3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ5.1D10E3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ47DE3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ47D10E3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ43DE3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ43D10E3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ39DE3/TR12
DIODE ZENER 5.1V 3W DO204AL
3EZ39D10E3/TR12
DIODE ZENER 5.1V 3W DO204AL
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic