Toshiba Semiconductor and Storage 2SB1457(TE6,F,M)
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- 2SB1457(TE6,F,M)
- Toshiba Semiconductor and Storage
- TRANS PNP 2A 100V TO226-3
- Transistors - Bipolar (BJT) - Single
- 2SB1457(TE6,F,M) Лист данных
- TO-226-3, TO-92-3 Long Body
- Bulk
-
Lead free / RoHS Compliant - 19377
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number 2SB1457(TE6,F,M) |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description TRANS PNP 2A 100V TO226-3 |
| Package Bulk |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-226-3, TO-92-3 Long Body |
| Supplier Device Package TO-92MOD |
| Power - Max 900 mW |
| Transistor Type PNP |
| Current - Collector (Ic) (Max) 2 A |
| Voltage - Collector Emitter Breakdown (Max) 100 V |
| Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V |
| Frequency - Transition 50MHz |
| Package_case TO-226-3, TO-92-3 Long Body |
2SB1457(TE6,F,M) Гарантии
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