Toshiba Semiconductor and Storage 2SB1457(T6CNO,A,F)
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- 2SB1457(T6CNO,A,F)
- Toshiba Semiconductor and Storage
- TRANS PNP 2A 100V TO226-3
- Transistors - Bipolar (BJT) - Single
- 2SB1457(T6CNO,A,F) Лист данных
- TO-226-3, TO-92-3 Long Body
- Bulk
-
Lead free / RoHS Compliant - 20066
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number 2SB1457(T6CNO,A,F) |
| Category Transistors - Bipolar (BJT) - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description TRANS PNP 2A 100V TO226-3 |
| Package Bulk |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-226-3, TO-92-3 Long Body |
| Supplier Device Package TO-92MOD |
| Power - Max 900 mW |
| Transistor Type PNP |
| Current - Collector (Ic) (Max) 2 A |
| Voltage - Collector Emitter Breakdown (Max) 100 V |
| Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A, 2V |
| Frequency - Transition 50MHz |
| Package_case TO-226-3, TO-92-3 Long Body |
2SB1457(T6CNO,A,F) Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 2SB1457(T6CNO,A,F) ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
2SB1457(T6CNO,A,F) сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
2SB1375,CLARIONF(M
TRANS PNP 3A 60V TO220-3
2SA965-Y,T6KOJPF(J
TRANS PNP 3A 60V TO220-3
2SA965-Y,T6F(J
TRANS PNP 3A 60V TO220-3
2SA965-Y,SWFF(M
TRANS PNP 3A 60V TO220-3
2SA965-Y,F(J
TRANS PNP 3A 60V TO220-3
2SC2383-O,T6ALPF(M
TRANS PNP 3A 60V TO220-3
2SC2383-O(T6OMI,FM
TRANS PNP 3A 60V TO220-3
2SC2235-Y,USNHF(M
TRANS PNP 3A 60V TO220-3
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
What is a bipolar transistor and what is its operating mode
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4
