Toshiba Semiconductor and Storage 1SS394TE85LF
- 1SS394TE85LF
- Toshiba Semiconductor and Storage
- DIODE SCHOTTKY 10V 100MA SC59
- Diodes - Rectifiers - Single
- 1SS394TE85LF Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1519
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SS394TE85LF |
Category Diodes - Rectifiers - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description DIODE SCHOTTKY 10V 100MA SC59 |
Package Tape & Reel (TR) |
Series - |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SC-59 |
Diode Type Schottky |
Current - Average Rectified (Io) 100mA |
Voltage - Forward (Vf) (Max) @ If 500 mV @ 100 mA |
Current - Reverse Leakage @ Vr 20 µA @ 10 V |
Capacitance @ Vr, F 40pF @ 0V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 10 V |
Speed Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction 125°C (Max) |
Package_case TO-236-3, SC-59, SOT-23-3 |
1SS394TE85LF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SS394TE85LF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
DSR01S30SC(TPL3)
DIODE SCHOTTKY 30V 100MA SC2
CUS521,H3F
DIODE SCHOTTKY 30V 100MA SC2
1SS196(TE85L,F)
DIODE SCHOTTKY 30V 100MA SC2
CES521,L3F
DIODE SCHOTTKY 30V 100MA SC2
CRH01(TE85L,Q,M)
DIODE SCHOTTKY 30V 100MA SC2
1SS424(TPL3,F)
DIODE SCHOTTKY 30V 100MA SC2
1SS389,L3F
DIODE SCHOTTKY 30V 100MA SC2
CUS520,H3F
DIODE SCHOTTKY 30V 100MA SC2
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic