Toshiba Semiconductor and Storage 1SS389,L3F
- 1SS389,L3F
- Toshiba Semiconductor and Storage
- DIODE SCHOTTKY 10V 100MA ESC
- Diodes - Rectifiers - Single
- 1SS389,L3F Лист данных
- SC-79, SOD-523
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 3126
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number 1SS389,L3F |
Category Diodes - Rectifiers - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description DIODE SCHOTTKY 10V 100MA ESC |
Package Cut Tape (CT) |
Series - |
Mounting Type Surface Mount |
Package / Case SC-79, SOD-523 |
Supplier Device Package ESC |
Diode Type Schottky |
Current - Average Rectified (Io) 100mA |
Voltage - Forward (Vf) (Max) @ If 500 mV @ 100 mA |
Current - Reverse Leakage @ Vr 20 µA @ 10 V |
Capacitance @ Vr, F 40pF @ 0V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 10 V |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction 125°C (Max) |
Package_case SC-79, SOD-523 |
1SS389,L3F Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о 1SS389,L3F ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
CUS520,H3F
DIODE SCHOTTKY 30V 200MA
CES388,L3F
DIODE SCHOTTKY 30V 200MA
1SS417CT,L3F
DIODE SCHOTTKY 30V 200MA
CTS05S40,L3F
DIODE SCHOTTKY 30V 200MA
CTS05S30,L3F
DIODE SCHOTTKY 30V 200MA
DSF01S30SL,L3F
DIODE SCHOTTKY 30V 200MA
CES520,L3F
DIODE SCHOTTKY 30V 200MA
CMS11(TE12L,Q,M)
DIODE SCHOTTKY 30V 200MA
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors