Diodes Incorporated ZXMP3F30FHTA
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- ZXMP3F30FHTA
- Diodes Incorporated
- MOSFET P-CH 30V 2.8A SOT23
- Transistors - FETs, MOSFETs - Single
- ZXMP3F30FHTA Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 24877
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number ZXMP3F30FHTA |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET P-CH 30V 2.8A SOT23 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 950mW (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs 80mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 370 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
ZXMP3F30FHTA Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о ZXMP3F30FHTA ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
ZXMP3F30FHTA сопутствующие товары
Комментарии
Diodes Incorporated
DMP3026SFDE-13
MOSFET P-CH 30V 10.4A 6UDFN
DMN3025LFDF-7
MOSFET P-CH 30V 10.4A 6UDFN
DMP6110SFDF-13
MOSFET P-CH 30V 10.4A 6UDFN
DMN2011UFDF-13
MOSFET P-CH 30V 10.4A 6UDFN
DMN3026LVTQ-13
MOSFET P-CH 30V 10.4A 6UDFN
DMN61D8LQ-13
MOSFET P-CH 30V 10.4A 6UDFN
DMN3016LFDF-13
MOSFET P-CH 30V 10.4A 6UDFN
DMT3020LFCL-7
MOSFET P-CH 30V 10.4A 6UDFN
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
