ZXMHC3A01N8TC

Diodes Incorporated ZXMHC3A01N8TC

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • ZXMHC3A01N8TC
  • Diodes Incorporated
  • MOSFET 2N/2P-CH 30V 8-SOIC
  • Transistors - FETs, MOSFETs - Arrays
  • ZXMHC3A01N8TC Лист данных
  • 8-SOIC (0.154\", 3.90mm Width)
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TCLead free / RoHS Compliant
  • 2428
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
ZXMHC3A01N8TC
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
Diodes Incorporated
Description
MOSFET 2N/2P-CH 30V 8-SOIC
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SO
Power - Max
870mW
FET Type
2 N and 2 P-Channel (H-Bridge)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.17A, 1.64A
Rds On (Max) @ Id, Vgs
125mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 25V
Package_case
8-SOIC (0.154\", 3.90mm Width)

ZXMHC3A01N8TC Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о ZXMHC3A01N8TC ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Diodes Incorporated
Diodes Incorporated,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMP4050SSD-13,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMP4050SSD-13

MOSFET 2P-CH 40V 4A 8SO

DMP4025LSD-13,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMP4025LSD-13

MOSFET 2P-CH 40V 4A 8SO

ZXMC3A16DN8TC,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
ZXMC3A16DN8TC

MOSFET 2P-CH 40V 4A 8SO

ZXMN10A08DN8TA,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
ZXMN10A08DN8TA

MOSFET 2P-CH 40V 4A 8SO

DMP6050SSD-13,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMP6050SSD-13

MOSFET 2P-CH 40V 4A 8SO

DMG6898LSD-13,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMG6898LSD-13

MOSFET 2P-CH 40V 4A 8SO

DMN6070SSD-13,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMN6070SSD-13

MOSFET 2P-CH 40V 4A 8SO

DMN2014LHAB-7,https://www.jinftry.ru/product_detail/ZXMHC3A01N8TC
DMN2014LHAB-7

MOSFET 2P-CH 40V 4A 8SO

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

Power Integrity (PI) Design and Test Methodology

Power Integrity (PI) Design and Test Methodology Power integrity (Power Integrity, referred to as PI) is a very important part of electronic system design, especially high-speed digital systems. PI is generally concerned with ensuring that the various components in the system receive clear, clean, and constant power. To this end, a suitable power distribution network (Power Distribution Network, PDN) needs to be designed and tested to ensure that its performance is up to standard.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP