Diodes Incorporated ZVN3306A
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- ZVN3306A
- Diodes Incorporated
- MOSFET N-CH 60V 270MA TO92-3
- Transistors - FETs, MOSFETs - Single
- ZVN3306A Лист данных
- TO-226-3, TO-92-3 (TO-226AA)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 24768
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number ZVN3306A |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Diodes Incorporated |
| Description MOSFET N-CH 60V 270MA TO92-3 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package TO-92 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 625mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 270mA (Ta) |
| Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs - |
| Input Capacitance (Ciss) (Max) @ Vds 35 pF @ 18 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-226-3, TO-92-3 (TO-226AA) |
ZVN3306A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о ZVN3306A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
ZVN3306A сопутствующие товары
Комментарии
Diodes Incorporated
ZVN4206A
MOSFET N-CH 60V 600MA TO92-3
ZVN4206AV
MOSFET N-CH 60V 600MA TO92-3
ZVN2110A
MOSFET N-CH 60V 600MA TO92-3
ZVN2106A
MOSFET N-CH 60V 600MA TO92-3
BSS84W-7
MOSFET N-CH 60V 600MA TO92-3
BSS138W-7
MOSFET N-CH 60V 600MA TO92-3
ZXMN2A02X8TA
MOSFET N-CH 60V 600MA TO92-3
ZVN4206AVSTOA
MOSFET N-CH 60V 600MA TO92-3
What is a bipolar transistor and what is its operating mode
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Power Integrity (PI) Design and Test Methodology
Power Integrity (PI) Design and Test Methodology
Power integrity (Power Integrity, referred to as PI) is a very important part of electronic system design, especially high-speed digital systems.
PI is generally concerned with ensuring that the various components in the system receive clear, clean, and constant power.
To this end, a suitable power distribution network (Power Distribution Network, PDN) needs to be designed and tested to ensure that its performance is up to standard.
Diodes Incorporated AS2333Q Operational Amplifier
Diodes Incorporated AS2333Q Operational Amplifier
Diodes Incorporated AS2333Q zero-drift op amps are dual CMOS op amps that provide ultra-low input offset voltage (8μV typical) and near zero drift over time and temperature. This technique also eliminates the 1/f noise and crossover distortion found in most rail-to-rail input op amps. The precision, low quiescent current amplifier provides high impedance inputs with a common-mode range of 100mV beyond the rails and rail-to-rail output swings wit
