Diotec Semiconductor ZMY6.8G
- ZMY6.8G
- Diotec Semiconductor
- DIODE ZENER 6.8V 1W MELF
- Diodes - Zener - Single
- ZMY6.8G Лист данных
- DO-213AB, MELF
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 5281
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number ZMY6.8G |
Category Diodes - Zener - Single |
Manufacturer Diotec Semiconductor |
Description DIODE ZENER 6.8V 1W MELF |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -50°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case DO-213AB, MELF |
Supplier Device Package MELF DO-213AB |
Tolerance ±5% |
Power - Max 1 W |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 500 nA @ 4 V |
Voltage - Zener (Nom) (Vz) 6.8 V |
Impedance (Max) (Zzt) 1 Ohms |
Package_case DO-213AB, MELF |
ZMY6.8G Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о ZMY6.8G ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diotec Semiconductor
ZMY4.7G
DIODE ZENER 4.7V 1W MELF
ZMY7.5G
DIODE ZENER 4.7V 1W MELF
ZMY47B
DIODE ZENER 4.7V 1W MELF
ZY24
DIODE ZENER 4.7V 1W MELF
ZY12
DIODE ZENER 4.7V 1W MELF
ZY200
DIODE ZENER 4.7V 1W MELF
ZY22
DIODE ZENER 4.7V 1W MELF
ZY10
DIODE ZENER 4.7V 1W MELF
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic