Diodes Incorporated ZDT6702TC
- ZDT6702TC
- Diodes Incorporated
- TRANS NPN/PNP DARL 60V 1.75A SM8
- Transistors - Bipolar (BJT) - Arrays
- ZDT6702TC Лист данных
- SOT-223-8
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2506
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number ZDT6702TC |
Category Transistors - Bipolar (BJT) - Arrays |
Manufacturer Diodes Incorporated |
Description TRANS NPN/PNP DARL 60V 1.75A SM8 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-223-8 |
Supplier Device Package SM8 |
Power - Max 2.75W |
Transistor Type NPN, PNP Darlington (Dual) |
Current - Collector (Ic) (Max) 1.75A |
Voltage - Collector Emitter Breakdown (Max) 60V |
Vce Saturation (Max) @ Ib, Ic 1.28V @ 2mA, 1.75A |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 500mA, 5V / 2000 @ 500mA, 5V |
Frequency - Transition 140MHz |
Package_case SOT-223-8 |
ZDT6702TC Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о ZDT6702TC ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Diodes Incorporated
ZDT649TC
TRANS 2NPN 25V 2A SM8
ZDT619TC
TRANS 2NPN 25V 2A SM8
ZDT605TC
TRANS 2NPN 25V 2A SM8
ZDT1147TC
TRANS 2NPN 25V 2A SM8
ZDT1053TC
TRANS 2NPN 25V 2A SM8
ZDT1049TC
TRANS 2NPN 25V 2A SM8
ZDT1048TC
TRANS 2NPN 25V 2A SM8
ZXTD6717E6TC
TRANS 2NPN 25V 2A SM8
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
Diodes Incorporated AS2333Q Operational Amplifier
Diodes Incorporated AS2333Q Operational Amplifier
Diodes Incorporated AS2333Q zero-drift op amps are dual CMOS op amps that provide ultra-low input offset voltage (8μV typical) and near zero drift over time and temperature. This technique also eliminates the 1/f noise and crossover distortion found in most rail-to-rail input op amps. The precision, low quiescent current amplifier provides high impedance inputs with a common-mode range of 100mV beyond the rails and rail-to-rail output swings wit