IXYS VUO35-12NO7
- VUO35-12NO7
- IXYS
- BRIDGE RECT 3P 1.2KV 38A PWS-A
- Diodes - Bridge Rectifiers
- VUO35-12NO7 Лист данных
- PWS-A
- Bulk
- Lead free / RoHS Compliant
- 2425
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number VUO35-12NO7 |
Category Diodes - Bridge Rectifiers |
Manufacturer IXYS |
Description BRIDGE RECT 3P 1.2KV 38A PWS-A |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case PWS-A |
Supplier Device Package PWS-A |
Technology Standard |
Diode Type Three Phase |
Voltage - Peak Reverse (Max) 1.2 kV |
Current - Average Rectified (Io) 38 A |
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 15 A |
Current - Reverse Leakage @ Vr 40 µA @ 1200 V |
Package_case PWS-A |
VUO35-12NO7 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VUO35-12NO7 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
VBO20-14AO2
BRIDGE RECT 1P 1.4KV 31A FO-A
VUO22-18NO1
BRIDGE RECT 1P 1.4KV 31A FO-A
VBE100-06NO7
BRIDGE RECT 1P 1.4KV 31A FO-A
VBO30-18NO7
BRIDGE RECT 1P 1.4KV 31A FO-A
VUO52-08NO1
BRIDGE RECT 1P 1.4KV 31A FO-A
VUO34-12NO1
BRIDGE RECT 1P 1.4KV 31A FO-A
VBO13-16AO2
BRIDGE RECT 1P 1.4KV 31A FO-A
VUO60-12NO3
BRIDGE RECT 1P 1.4KV 31A FO-A
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).