IXYS VUO125-14NO7
- VUO125-14NO7
- IXYS
- BRIDGE RECT 3P 1.4KV 166A PWS-C
- Diodes - Bridge Rectifiers
- VUO125-14NO7 Лист данных
- PWS-C
- Bulk
- Lead free / RoHS Compliant
- 3011
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number VUO125-14NO7 |
Category Diodes - Bridge Rectifiers |
Manufacturer IXYS |
Description BRIDGE RECT 3P 1.4KV 166A PWS-C |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case PWS-C |
Supplier Device Package PWS-C |
Technology Standard |
Diode Type Three Phase |
Voltage - Peak Reverse (Max) 1.4 kV |
Current - Average Rectified (Io) 166 A |
Voltage - Forward (Vf) (Max) @ If 1.07 V @ 50 A |
Current - Reverse Leakage @ Vr 200 µA @ 1400 V |
Package_case PWS-C |
VUO125-14NO7 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VUO125-14NO7 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
VBO130-12NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
VUO120-12NO2T
BRIDGE RECT 1P 1.2KV 122A PWS-E
VUO110-18NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
VBO125-12NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
VBO105-12NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
VUO105-12NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
VUO110-14NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
VBO130-08NO7
BRIDGE RECT 1P 1.2KV 122A PWS-E
What is a bipolar transistor and what is its operating mode
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.