VUO110-12NO7

IXYS VUO110-12NO7

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • VUO110-12NO7
  • IXYS
  • BRIDGE RECT 3P 1.2KV 127A PWS-E1
  • Diodes - Bridge Rectifiers
  • VUO110-12NO7 Лист данных
  • PWS-E
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/VUO110-12NO7Lead free / RoHS Compliant
  • 3797
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
VUO110-12NO7
Category
Diodes - Bridge Rectifiers
Manufacturer
IXYS
Description
BRIDGE RECT 3P 1.2KV 127A PWS-E1
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
PWS-E
Supplier Device Package
PWS-E
Technology
Standard
Diode Type
Three Phase
Voltage - Peak Reverse (Max)
1.2 kV
Current - Average Rectified (Io)
127 A
Voltage - Forward (Vf) (Max) @ If
1.13 V @ 50 A
Current - Reverse Leakage @ Vr
100 µA @ 1200 V
Package_case
PWS-E

VUO110-12NO7 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/VUO110-12NO7

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/VUO110-12NO7

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/VUO110-12NO7

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о VUO110-12NO7 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/VUO110-12NO7
VUM24-05N,https://www.jinftry.ru/product_detail/VUO110-12NO7
VUM24-05N

BRIDGE RECT 1P 600V 40A V1-B

VUO62-16NO7,https://www.jinftry.ru/product_detail/VUO110-12NO7
VUO62-16NO7

BRIDGE RECT 1P 600V 40A V1-B

VBO20-16AO2,https://www.jinftry.ru/product_detail/VUO110-12NO7
VBO20-16AO2

BRIDGE RECT 1P 600V 40A V1-B

VBE17-12NO7,https://www.jinftry.ru/product_detail/VUO110-12NO7
VBE17-12NO7

BRIDGE RECT 1P 600V 40A V1-B

FBS16-06SC,https://www.jinftry.ru/product_detail/VUO110-12NO7
FBS16-06SC

BRIDGE RECT 1P 600V 40A V1-B

VUO36-12NO8,https://www.jinftry.ru/product_detail/VUO110-12NO7
VUO36-12NO8

BRIDGE RECT 1P 600V 40A V1-B

VUO190-18NO7,https://www.jinftry.ru/product_detail/VUO110-12NO7
VUO190-18NO7

BRIDGE RECT 1P 600V 40A V1-B

VBE60-06A,https://www.jinftry.ru/product_detail/VUO110-12NO7
VBE60-06A

BRIDGE RECT 1P 600V 40A V1-B

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP