VSKD320-08

Vishay Semiconductor - Diodes Division VSKD320-08

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • VSKD320-08
  • Vishay Semiconductor - Diodes Division
  • DIODE MODULE 800V 320A MAGNAPAK
  • Diodes - Rectifiers - Arrays
  • VSKD320-08 Лист данных
  • 3-MAGN-A-PAK™
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/VSKD320-08Lead free / RoHS Compliant
  • 2887
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
VSKD320-08
Category
Diodes - Rectifiers - Arrays
Manufacturer
Vishay Semiconductor - Diodes Division
Description
DIODE MODULE 800V 320A MAGNAPAK
Package
Bulk
Series
-
Mounting Type
Chassis Mount
Package / Case
3-MAGN-A-PAK™
Supplier Device Package
MAGN-A-PAK®
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
-
Current - Reverse Leakage @ Vr
50 mA @ 800 V
Diode Configuration
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max)
800 V
Current - Average Rectified (Io) (per Diode)
320A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-
Package_case
3-MAGN-A-PAK™

VSKD320-08 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/VSKD320-08

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/VSKD320-08

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/VSKD320-08

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о VSKD320-08 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD270-30,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD270-30

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD270-16,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD270-16

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD270-12,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD270-12

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD270-08,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD270-08

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD250-20,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD250-20

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD250-16,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD250-16

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD250-12,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD250-12

DIODE MODULE 3KV 270A MAGN-A-PAK

VSKD250-08,https://www.jinftry.ru/product_detail/VSKD320-08
VSKD250-08

DIODE MODULE 3KV 270A MAGN-A-PAK

What are IGBTs? How to improve the thermal performance design of IGBT on PCB

What are IGBTs? How to improve the thermal performance design of IGBT on PCB IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors

Classification of IGBT modules, difference between application characteristics and MOSFETs

Classification of IGBT modules, difference between application characteristics and MOSFETs Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:

The most complete introduction to IGBT modules in 2023

IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.

ON NTD2955G series packages and features are different

NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP