Vishay Semiconductor - Diodes Division VS-VSKD236/04PBF
- VS-VSKD236/04PBF
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 400V 115A INTAPAK
- Diodes - Rectifiers - Arrays
- VS-VSKD236/04PBF Лист данных
- 3-MAGN-A-PAK™
- Bulk
- Lead free / RoHS Compliant
- 1219
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number VS-VSKD236/04PBF |
Category Diodes - Rectifiers - Arrays |
Manufacturer Vishay Semiconductor - Diodes Division |
Description DIODE GEN PURP 400V 115A INTAPAK |
Package Bulk |
Series - |
Mounting Type Chassis Mount |
Package / Case 3-MAGN-A-PAK™ |
Supplier Device Package MAGN-A-PAK® |
Diode Type Standard |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 20 mA @ 400 V |
Diode Configuration 1 Pair Common Cathode |
Voltage - DC Reverse (Vr) (Max) 400 V |
Current - Average Rectified (Io) (per Diode) 115A |
Speed Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) - |
Operating Temperature - Junction -40°C ~ 150°C |
Package_case 3-MAGN-A-PAK™ |
VS-VSKD236/04PBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VS-VSKD236/04PBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Semiconductor - Diodes Division
VS-VSKC236/04PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKC196/08PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKD166/16PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKC236/12PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKC196/12PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKD236/16PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKD196/16PBF
DIODE GEN PURP 400V 115A INTAPAK
VS-VSKC236/16PBF
DIODE GEN PURP 400V 115A INTAPAK
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences: